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n and p-channel enhancement mode power mos fet general features n-channel v ds = 60v,i d =6.3a r ds(on) < 30m ? @ v gs =10v p-channel v ds = -60v,i d = -5a r ds(on) < 80m ? @ v gs =-10v high power and current handing capability lead free product is acquired surface mount package schematic diagram marking and pin assignment sop-8 top view p ackage marking and ordering information device marking devic age r ta th device e pac k eel size pe wid quantity sop-8 ?330mm 12mm 2500 units a bsolute maximum ratings (t a =25 unless otherwise noted) parameter sy l n-channel p-channel u t mbo ni drain-source voltage v ds 60 -60 v gate-source voltage v gs v 20 20 t a =25 6.3 -5 continuous drain current t a =70 i d a 4.5 -3.5 pulsed drain current (note 1) i dm 40 -25 a maximum power dissipation t a =25 p d 2.0 2.0 w o perating junction and stor age temperature range t j ,t stg -55 to 150 -55 to 150 n-channel p-channel MSC0606W MSC0606W MSC0606W more semiconductor company limited http://www.moresemi.com 1/8
thermal characteristic thermal resistance,junction-to-ambient (note2) r ja n-ch 62.5 /w t hermal resistance,junction-to-ambient (note2) r ja p-ch 62.5 /w n-ch electrical characteristics (t a = ss oth ted) ameter symbol condition min typ max unit 25 u nle erwise no par off characteristics drain-source breakdown voltage b 6 v dss v gs =0v i d =250 a 0 - - v zero gate voltage drain curre nt i dss v ds =60v,v gs =0v - - 1 a gate-body leakage curren t i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v 1 ds =v gs ,i d =250 a .2 1.6 2.5 v drain-source on-state resis tance r ) v 26 3 m ds(on gs =10v, i d =6a - 0 ? forward transconductance g fs v ds =5v,i d =6a 15 - - s dynamic characte ristics (note4) input capacitance c lss - 500 - pf output capacitance c oss - 60 - pf reverse transfer capacitance c rss v ds v, f =1.0mhz - 25 - pf =15v,v gs =0 switching characteri stics (note 4) turn-on delay time t d - (on) 5 - ns turn-on rise time t r - 2.6 - ns turn-off delay time t d - (off) 16.1 - ns turn-off fall time t f v dd =30v, r l =4.7 ? v gs =10v,r gen =3 ? - 2.3 - ns total gate charge q g - 25 - nc gate-source charge q gs - 4.5 - nc gate-drain charge q gd v ds a, v gs =10v - 6.5 - nc =15v,i d =6 drain-source diode charact eristics diode forward voltage (note 3) v sd v gs =0v,i s =6a - 0.8 1.2 v more semiconductor company limited http://www.moresemi.com 2/8 MSC0606W p-ch electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =-250 a -60 - - v zero gate voltage drain current i dss v ds =-60v,v gs =0v - - 1 a gate-body leakage current i gss v gs =20v,v ds =0v - - 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a -1.5 -2.6 -3.5 v drain-source on-state resistance r ds(on) v gs =-10v, i d =-5a - 64 80 m ? forward transconductance g fs v ds =-15v,i d =-5a 16 - - s dynamic characteristics (note4) input capacitance c lss - 1450 - pf output capacitance c oss - 145 - pf reverse transfer capacitance c rss v ds =-20v,v gs =0v, f=1.0mhz - 110 - pf switching characteristics (note 4) turn-on delay time t d(on) - 8 - ns turn-on rise time t r - 9 - ns turn-off delay time t d(off) - 65 - ns turn-off fall time t f v dd =-30v, ,r l =30 ? v gs =-10v,r gen =6 ? - 30 - ns total gate charge q g - 26 - nc gate-source charge q gs - 4.5 - nc gate-drain charge q gd v ds =-30v,i d =-5a, v gs =-10v - 7 - nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =-5a - - -1.2 v diode forward current (note 2) i s - - -5 a notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2 . % 4. guaranteed by design, not subject to production more semiconductor company limited http://www.moresemi.com 3/8 MSC0606W n-chtypical electrical and thermal characteristics (curves) vds drain-source voltage (v) figure 1 output characteristics vgs gate-source voltage (v) figure 2 transfer characteristics i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junction temperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward rdson on-resistance(m ) i d - drain current (a) i d - drain current (a) normalized on-resistance vgs gate-source voltage (v) i s - reverse drain current (a) more semiconductor company limited http://www.moresemi.com 4/8 MSC0606W vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 power dissipatio i d - drain current (a) c capacitance (pf) square wave pluse duration (sec) figure 11 normalized maximum transient thermal impedance r(t),normalized effective transient thermal im p edance p d power(w) more semiconductor company limited http://www.moresemi.com 5/8 MSC0606W p-ch typical electrical and therma l characteristics (curves) -vds drain-source voltage (v) figure 1 output characteristics -vgs gate-source voltage (v) figure 2 transfer characteristics - i d - drain current (a) figure 3 rdson- drain current t j -junction temperature( ) figure 4 rdson-junction temperature qg gate charge (nc) figure 5 gate charge vsd source-drain voltage (v) figure 6 source- drain diode forward -i d - drain current (a) -i d - drain current (a) normalized on-resistance -vgs gate-source voltage (v) i s - reverse drain current (a) rdson on-resistance( ) more semiconductor company limited http://www.moresemi.com 6/8 MSC0606W vds drain-source voltage (v) figure 7 capacitance vs vds vds drain-source voltage (v) figure 8 safe operation area t j -junction temperature ( ) figure 9 bv dss vs junction temperature t j -junction temperature( ) figure 10 v gs(th) vs junction temperature i d - drain current (a) c capacitance (pf) square wave pluse duration(sec) figure 11 normalized maximum transient thermal impedance normalized bvdss r(t),normalized effective transient thermal im p edance more semiconductor company limited http://www.moresemi.com 7/8 MSC0606W sop-8 package information dimensions in millimeters dimensions in inches symbol min. max. min. max. a 1.350 1.750 0.053 0.069 a1 0.100 0.250 0.004 0.010 a2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 d 4.700 5.100 0.185 0.200 e 3.800 4.000 0.150 0.157 e1 5.800 6.200 0.228 0.244 e 1.270(bsc) 0.050(bsc) l 0.400 1.270 0.016 0.050 0 8 0 8 more semiconductor company limited http://www.moresemi.com 8/8 MSC0606W |
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